IAUC90N10S5N062ATMA1 vs BSC0902NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC90N10S5N062ATMA1 disebabkan oleh Infineon dan BSC0902NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUC90N10S5N062ATMA1 BSC0902NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) at Tc=25C 90 A —
Maximum On-Resistance RDS(on) max at VGS=10V 6.2 mOhm —
Gate-Source Threshold Voltage VGS(th) typ 3.8 V —
Maximum Power Dissipation (Tc=25C) 115 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TDSON-8-34 (TDSON-8) PG-TDSON-8-6 (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 5, Generation 5) —
Avalanche Rated Yes (100% avalanche tested) Yes (100% avalanche tested)
MSL (Moisture Sensitivity Level) MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
RoHS / Green Product Yes (RoHS compliant, Green Product) —
Lead-Free Yes —
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Gambaran Suhu Operasi — -55C to +150C (Tj)
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Boson Bebas — Yes, per IEC 61249-2-21

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