IAUCN04S6N013TATMA1 vs IAUCN04S7N015GATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S6N013TATMA1 dari Infineon dan IAUCN04S7N015GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S6N013TATMA1 IAUCN04S7N015GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) 230 A at T<sub>C</sub> —
R<sub>DS(on)</sub> (max) 1.32 mΩ at V<sub>GS</sub> = 10 V —
Power Dissipation (P<sub>D</sub>) 133 W at T<sub>C</sub> —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 2.6 V (typ) —
Total Gate Charge (Q<sub>g</sub>) 52 nC at V<sub>GS</sub> = 10 V —
Input Capacitance (C<sub>iss</sub>) 1.08 nF —
Output Capacitance (C<sub>oss</sub>) 3.7 nF —
Reverse Transfer Capacitance (C<sub>rss</sub>) 51 pF —
Suhu Hubung Kerja -55 °C to +175 °C -55C to +175C
Paket PG-LHDSO-10-1 (SSO10T) PG-THSOG-4-1 (SSO4G 5x6) surface mount
Tipe Mounting Surface Mount Surface Mount (IMS-compatible source-down)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 165 A (Tc)
Power Dissipation (P_D) — 96 W (Tc)
R_DS(on) max — 1.53 mΩ at V_GS=10 V
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
Level MSL — 1 (per JEDEC J-STD-020)

Spek dan Sumber

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