IAUCN04S6N013TATMA1 vs IAUCN04S7N015GATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S6N013TATMA1 by Infineon and IAUCN04S7N015GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S6N013TATMA1
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
IAUCN04S6N013TATMA1 β ActiveInfineon
IAUCN04S7N015GATMA1
IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon
IAUCN04S7N015GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S6N013TATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.66 | $2.21 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 230 A at T<sub>C</sub> | β |
| R<sub>DS(on)</sub> (max) | 1.32 mΞ© at V<sub>GS</sub> = 10 V | β |
| Power Dissipation (P<sub>D</sub>) | 133 W at T<sub>C</sub> | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.6 V (typ) | β |
| Total Gate Charge (Q<sub>g</sub>) | 52 nC at V<sub>GS</sub> = 10 V | β |
| Input Capacitance (C<sub>iss</sub>) | 1.08 nF | β |
| Output Capacitance (C<sub>oss</sub>) | 3.7 nF | β |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 51 pF | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55C to +175C |
| Package | PG-LHDSO-10-1 (SSO10T) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS-compatible source-down) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D) | β | 165 A (Tc) |
| Power Dissipation (P_D) | β | 96 W (Tc) |
| R_DS(on) max | β | 1.53 mΞ© at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: total gate charge] |
| MSL Level | β | 1 (per JEDEC J-STD-020) |