IAUCN04S7L050HATMA1 vs IAUA180N04S5N012AUMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7L050HATMA1 dari Infineon dan IAUA180N04S5N012AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUA180N04S5N012AUMA1 IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7L050HATMA1 IAUA180N04S5N012AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 OptiMOS-5 40 V
Configuration Dual N-Channel (Dual Drain, Half-Bridge) —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID), Tc=25°C 65 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 5.04 mΩ —
Gate-Source Voltage (VGS) max ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) @ Tc=25°C 40 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-57 (SuperSO8 half-bridge) PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm²
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 (family-level, automotive grade) AEC-Q101
Technology Trench MOSFET, OptiMOS™ 7 40V OptiMOS-5 Trench
Part Number — IAUA180N04S5N012AUMA1
FET Type — N-Channel
Continuous Drain Current (ID) — 180 A (Tc)
Maximum Power Dissipation (PD) — 125 W (Tc)
R_DS(on) (max) — 1.2 mΩ at 10 V VGS
Rentang Suhu Kerja — -55 °C to +175 °C (Tj)

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