IAUCN04S7N009ATMA1 vs IAUC60N04S6N044ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N009ATMA1 dari Infineon dan IAUC60N04S6N044ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7N009ATMA1 IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N009ATMA1 IAUC60N04S6N044ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 7 —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS-6 N-channel trench MOSFET
Drain-to-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D) 175 A —
R_DS(on) Max @ V_GS = 10 V 0.96 mΩ —
Gate Drive Voltage (V_GS) 10 V —
Paket PG-TDSON-8-34 (Surface Mount) PG-TDSON-8 (5x6 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +175C —
Qualification AEC-Q101 (Automotive) —
Level MSL 1 1 (unlimited)
Status RoHS Compliant Compliant
Configuration Single N-Channel —
Supplier Device Package PG-TDSON-8-34 —
Drain-Source Voltage (V_DS) — 40 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at Tc=25°C — 60 A
Continuous Drain Current (I_D) at Tc=100°C — [DATA_NEEDED: pulsed/current derated value]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max @ V_GS=10V — 4.4 mΩ
On-Resistance R_DS(on) max @ V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
Total Gate Charge (Q_g) — [DATA_NEEDED: typical gate charge]
Power Dissipation (P_D) at Tc=25°C — 42 W
Suhu Hubung Kerja — -55°C to +175°C
Automotive Qualification — AEC-Q101 qualified (IAUC prefix)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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