IAUCN04S7N009ATMA1 vs IAUC60N04S6N044ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7N009ATMA1 sa pamamagitan ng Infineon at IAUC60N04S6N044ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUCN04S7N009ATMA1 IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 ✓ Nakahanda
Infineon
IAUC60N04S6N044ATMA1 IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6N044ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUCN04S7N009ATMA1 IAUC60N04S6N044ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS 7 —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS-6 N-channel trench MOSFET
Drain-to-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D) 175 A —
R_DS(on) Max @ V_GS = 10 V 0.96 mΩ —
Gate Drive Voltage (V_GS) 10 V —
Packhaging PG-TDSON-8-34 (Surface Mount) PG-TDSON-8 (5x6 mm) with exposed pad
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +175C —
Qualification AEC-Q101 (Automotive) —
Level ng MSL 1 1 (unlimited)
Tindminan RoHS Compliant Compliant
Configuration Single N-Channel —
Supplier Device Package PG-TDSON-8-34 —
Drain-Source Voltage (V_DS) — 40 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at Tc=25°C — 60 A
Continuous Drain Current (I_D) at Tc=100°C — [DATA_NEEDED: pulsed/current derated value]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max @ V_GS=10V — 4.4 mΩ
On-Resistance R_DS(on) max @ V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
Total Gate Charge (Q_g) — [DATA_NEEDED: typical gate charge]
Power Dissipation (P_D) at Tc=25°C — 42 W
Temperature ng Junction na Operasyon — -55°C to +175°C
Automotive Qualification — AEC-Q101 qualified (IAUC prefix)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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