IAUCN08S7L024ATMA1 vs ISC011N04NM7VATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN08S7L024ATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUCN08S7L024ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS™ 7 N-channel trench MOSFET | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) | 177 A (Tj) | — |
| Continuous Drain Current (Silicon-limited) | 150 A | — |
| On-Resistance RDS(on) max | 2.4 mΩ at VGS=10 V | — |
| Power Dissipation (PD) | 148 W (Tc) | — |
| Paket | PG-TDSON-8-34 (SSO8 5x6 mm²) | PG-TDSON-8 (source-down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (Tj) | -55 °C to +175 °C (TJ) |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Status RoHS | Compliant | — |
| Level MSL | MSL1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |