IAUCN08S7L024ATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L024ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L024ATMA1
IAUCN08S7L024ATMA1 - 80V 2.4mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L024ATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7L024ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $0.41 |
| Technology | OptiMOSβ’ 7 N-channel trench MOSFET | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) | 177 A (Tj) | β |
| Continuous Drain Current (Silicon-limited) | 150 A | β |
| On-Resistance RDS(on) max | 2.4 mΞ© at VGS=10 V | β |
| Power Dissipation (PD) | 148 W (Tc) | β |
| Package | PG-TDSON-8-34 (SSO8 5x6 mmΒ²) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (Tj) | -55 Β°C to +175 Β°C (TJ) |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | β |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| RoHS Compliance | β | Compliant (per Infineon product page) |