IAUCN08S7N024ATMA1 vs IAUCN04S7N027GATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7N024ATMA1 dari Infineon dan IAUCN04S7N027GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7N024ATMA1 IAUCN04S7N027GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 (80 V) —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC=25C 165 A —
Drain-Source On-Resistance (RDS(on)) max 2.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Technology OptiMOS 7 trench —
Paket PG-TDSON-8-34 (8-pin, exposed pad) —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (typical automotive) [DATA_NEEDED: operating temperature range]
Dissipasi Listrik (Ptot) [DATA_NEEDED: Ptot @ TC=25C] —
Automotive Qualification AEC-Q101 —
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL]
Typical Application 48 V automotive DC-DC, motor drive, load switch —
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Paket / Case — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Status RoHS — Compliant
Substrate Compatibility — IMS substrates and legacy FR-4

Spek dan Sumber

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