IAUCN08S7N034ATMA1 vs IAUCN08S7N024ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7N034ATMA1 dari Infineon dan IAUCN08S7N024ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7N034ATMA1 IAUCN08S7N024ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 Automotive OptiMOS 7 (80 V)
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 120 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V 3.4 mΩ —
Gate-Source Threshold (V<sub>GS(th)</sub>) 3.2 V (typ) —
Total Gate Charge (Q<sub>G</sub>) 45.8 nC @ V<sub>GS</sub>=10 V —
Input Capacitance (C<sub>iss</sub>) 1.27 nF —
Output Capacitance (C<sub>oss</sub>) 3.115 nF —
Reverse Transfer Capacitance (C<sub>rss</sub>) 23 pF —
Power Dissipation (P<sub>D</sub>) 118 W —
Suhu Hubung Kerja -55°C to +175°C —
Paket PG-TDSON-8-34 (TDSON EP) PG-TDSON-8-34 (8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL 1 (unlimited floor life) [DATA_NEEDED: MSL rating]
Automotive Qualification AEC-Q101 AEC-Q101
Status RoHS Compliant —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC=25C — 165 A
Drain-Source On-Resistance (RDS(on)) max — 2.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Technology — OptiMOS 7 trench
Rentang Suhu Kerja — -55C to +175C (typical automotive)
Dissipasi Listrik (Ptot) — [DATA_NEEDED: Ptot @ TC=25C]
RoHS Compliance — Compliant
Typical Application — 48 V automotive DC-DC, motor drive, load switch

Spek dan Sumber

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