IAUCN08S7N034ATMA1 vs ISC016N08NM8ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN08S7N034ATMA1 dari Infineon dan ISC016N08NM8ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IAUCN08S7N034ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 120 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 3.4 mΩ | — |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | 3.2 V (typ) | — |
| Total Gate Charge (Q<sub>G</sub>) | 45.8 nC @ V<sub>GS</sub>=10 V | — |
| Input Capacitance (C<sub>iss</sub>) | 1.27 nF | — |
| Output Capacitance (C<sub>oss</sub>) | 3.115 nF | — |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 23 pF | — |
| Power Dissipation (P<sub>D</sub>) | 118 W | — |
| Suhu Hubung Kerja | -55°C to +175°C | — |
| Paket | PG-TDSON-8-34 (TDSON EP) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL 1 (unlimited floor life) | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
| Automotive Qualification | AEC-Q101 | — |
| Status RoHS | Compliant | Compliant |
| Product Series | — | OptiMOS 8 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Rentang Suhu Kerja | — | -55 C to +150 C (junction) |
| Technology | — | Trench-gate OptiMOS 8 (silicon) |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |