IAUCN08S7N034ATMA1 vs ISC016N08NM8ATMA1 比較

詳細並排比較 IAUCN08S7N034ATMA1 由 Infineon 與 ISC016N08NM8ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN08S7N034ATMA1 IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon

IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon

IAUCN08S7N034ATMA1 ✓ 啟用中
Infineon
ISC016N08NM8ATMA1 ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 ✓ 啟用中

規格比較

參數 IAUCN08S7N034ATMA1 ISC016N08NM8ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 —
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 120 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V 3.4 mΩ —
Gate-Source Threshold (V<sub>GS(th)</sub>) 3.2 V (typ) —
Total Gate Charge (Q<sub>G</sub>) 45.8 nC @ V<sub>GS</sub>=10 V —
Input Capacitance (C<sub>iss</sub>) 1.27 nF —
Output Capacitance (C<sub>oss</sub>) 3.115 nF —
Reverse Transfer Capacitance (C<sub>rss</sub>) 23 pF —
Power Dissipation (P<sub>D</sub>) 118 W —
工作接面溫度 -55°C to +175°C —
封裝 PG-TDSON-8-34 (TDSON EP) SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm)
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL 1 (unlimited floor life) 1 (per JEDEC J-STD-020E classification for SuperSO8)
Automotive Qualification AEC-Q101 —
RoHS 狀態 Compliant Compliant
Product Series — OptiMOS 8
Channel Type — N-Channel
Drain-Source Voltage (VDS max) — 80 V
Gate-Source Voltage (VGS max) — +/-20 V (typical rating)
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — [DATA_NEEDED: pulsed/continuous current rating at Tc]
Pulsed Drain Current (IDM) at Tc — 268 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 263 W
On-State Resistance RDS(on) typ @ VGS=10V — 1.6 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg typ — [DATA_NEEDED: total gate charge]
工作溫度範圍 — -55 C to +150 C (junction)
Technology — Trench-gate OptiMOS 8 (silicon)
Lead-Free / Halogen-Free — Lead-free (per Infineon product page)

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