IAUCN08S7N034ATMA1 vs ISC016N08NM8ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7N034ATMA1 disebabkan oleh Infineon dan ISC016N08NM8ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IAUCN08S7N034ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 120 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 3.4 mΩ | — |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | 3.2 V (typ) | — |
| Total Gate Charge (Q<sub>G</sub>) | 45.8 nC @ V<sub>GS</sub>=10 V | — |
| Input Capacitance (C<sub>iss</sub>) | 1.27 nF | — |
| Output Capacitance (C<sub>oss</sub>) | 3.115 nF | — |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 23 pF | — |
| Power Dissipation (P<sub>D</sub>) | 118 W | — |
| Suhu Hubungan Operasi | -55°C to +175°C | — |
| Kemasan | PG-TDSON-8-34 (TDSON EP) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL 1 (unlimited floor life) | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
| Automotive Qualification | AEC-Q101 | — |
| Status RoHS | Compliant | Compliant |
| Product Series | — | OptiMOS 8 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Gambaran Suhu Operasi | — | -55 C to +150 C (junction) |
| Technology | — | Trench-gate OptiMOS 8 (silicon) |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |