IAUT300N08S5N011ATMA1 vs IAUT300N08S5N012ATMA2 Perbandingan
Perbandingan bersamaan detil IAUT300N08S5N011ATMA1 dari Infineon dan IAUT300N08S5N012ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUT300N08S5N011ATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | — |
| Drain-Source Voltage (V_DS) | 80 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 300 A | — |
| Pulsed Drain Current (I_DM) | 410 A (Tj) | — |
| R_DS(on) max | 1.10 mOhm at V_GS=10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.8 V | — |
| Total Gate Charge (Q_g) | 231 nC at V_GS=10 V | — |
| Input Capacitance (C_iss) | 16.25 nF | — |
| Output Capacitance (C_oss) | 2.6 nF | — |
| Reverse Transfer Capacitance (C_rss) | 130 pF | — |
| Power Dissipation (P_D) | 375 W at T_C=25C | — |
| Rentang Suhu Kerja | -55C to +175C | -55 °C to +175 °C (TJ) |
| Paket | PG-HSOF-8-1 (TOLL 10x12 mm) | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | [DATA_NEEDED: MSL level] |
| Qualification | Automotive (AEC-Q101) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™-5 80 V |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | 1200 A (per datasheet, typical) |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | — | 375 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |