IAUT300N08S5N011ATMA1 vs IAUT300N08S5N012ATMA2 对比
详细并排对比 IAUT300N08S5N011ATMA1 出自 Infineon 和 IAUT300N08S5N012ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUT300N08S5N011ATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.40 | $2.20 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | — |
| Drain-Source Voltage (V_DS) | 80 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 300 A | — |
| Pulsed Drain Current (I_DM) | 410 A (Tj) | — |
| R_DS(on) max | 1.10 mOhm at V_GS=10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.8 V | — |
| Total Gate Charge (Q_g) | 231 nC at V_GS=10 V | — |
| Input Capacitance (C_iss) | 16.25 nF | — |
| Output Capacitance (C_oss) | 2.6 nF | — |
| Reverse Transfer Capacitance (C_rss) | 130 pF | — |
| Power Dissipation (P_D) | 375 W at T_C=25C | — |
| 工作温度范围 | -55C to +175C | -55 °C to +175 °C (TJ) |
| 封装 | PG-HSOF-8-1 (TOLL 10x12 mm) | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 | [DATA_NEEDED: MSL level] |
| Qualification | Automotive (AEC-Q101) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™-5 80 V |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | 1200 A (per datasheet, typical) |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | — | 375 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |