IAUZ18N10S5L420ATMA1 vs BSC019N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil IAUZ18N10S5L420ATMA1 dari Infineon dan BSC019N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUZ18N10S5L420ATMA1 IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUZ18N10S5L420ATMA1 BSC019N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 100V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 18 A —
On-Resistance RDS(on) max at VGS=10V 42 mΩ 1.9 mOhm
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) 1.7 V to 2.7 V —
Total Gate Charge (Qg) typ. 8.5 nC —
Power Dissipation (PD) at TC=25°C 30 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm PG-TSON-8-3 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Technology OptiMOS 5 trench OptiMOS 5 (N-channel trench)
Configuration Single with built-in diode —
Status RoHS Compliant Compliant
Level MSL 1 1
Polarity — N-Channel
Drain-Source Voltage (VDS) max — 80 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at TA=25C — 28 A
Continuous Drain Current (ID) at TC=25C — 237 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
Gate Threshold Voltage VGS(th) typ — 3.0 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 214 W
Rentang Suhu Kerja — -55 C to +150 C
Avalanche Rated — Yes

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