IAUZN04S7L030ATMA1 vs IAUC60N04S6N044ATMA1 Perbandingan

Perbandingan bersamaan detil IAUZN04S7L030ATMA1 dari Infineon dan IAUC60N04S6N044ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUZN04S7L030ATMA1 IAUC60N04S6N044ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25°C) 60 A —
Pulsed Drain Current (IDM, Tj) 100 A —
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD, Tc=25°C) 58 W —
Operating Junction Temperature (Tj) -55C to +175C —
Technology Family OptiMOS-7 —
Channel Type N-Channel —
Paket PG-TSDSON-8-44 (S3O8) 3x3 mm² PG-TDSON-8 (5x6 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (Automotive OptiMOS) AEC-Q101 qualified (IAUC prefix)
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Technology — OptiMOS-6 N-channel trench MOSFET
Drain-Source Voltage (V_DS) — 40 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at Tc=25°C — 60 A
Continuous Drain Current (I_D) at Tc=100°C — [DATA_NEEDED: pulsed/current derated value]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max @ V_GS=10V — 4.4 mΩ
On-Resistance R_DS(on) max @ V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
Total Gate Charge (Q_g) — [DATA_NEEDED: typical gate charge]
Power Dissipation (P_D) at Tc=25°C — 42 W
Suhu Hubung Kerja — -55°C to +175°C
Status RoHS — Compliant
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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