IAUZN04S7L030ATMA1 vs IAUCN04S7N006ATMA1 Perbandingan

Perbandingan bersamaan detil IAUZN04S7L030ATMA1 dari Infineon dan IAUCN04S7N006ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUZN04S7L030ATMA1 IAUCN04S7N006ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25°C) 60 A —
Pulsed Drain Current (IDM, Tj) 100 A —
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD, Tc=25°C) 58 W —
Operating Junction Temperature (Tj) -55C to +175C —
Technology Family OptiMOS-7 —
Channel Type N-Channel —
Paket PG-TSDSON-8-44 (S3O8) 3x3 mm² PG-TDSON-8-43
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (Automotive OptiMOS) AEC-Q101
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
FET Type — N-Channel
Continuous Drain Current (ID) — 175 A
On-State Resistance (RDS(on)) — 0.63 mOhm (typ at VGS = 10 V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Technology — OptiMOS 5 (trench)
Rentang Suhu Kerja — -55 C to +175 C
Junction Temperature Max — 175 C
Power Dissipation Max (Pd) — [DATA_NEEDED: Pd max]
Gate Charge Total (Qg) — [DATA_NEEDED: Qg total]
Lead-Free / RoHS — Yes (compliant)

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