IAUZN04S7L030ATMA1 vs IAUCN04S7N006ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZN04S7L030ATMA1 disebabkan oleh Infineon dan IAUCN04S7N006ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUZN04S7L030ATMA1 IAUCN04S7N006ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25°C) 60 A —
Pulsed Drain Current (IDM, Tj) 100 A —
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD, Tc=25°C) 58 W —
Operating Junction Temperature (Tj) -55C to +175C —
Technology Family OptiMOS-7 —
Channel Type N-Channel —
Kemasan PG-TSDSON-8-44 (S3O8) 3x3 mm² PG-TDSON-8-43
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (Automotive OptiMOS) AEC-Q101
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
FET Type — N-Channel
Continuous Drain Current (ID) — 175 A
On-State Resistance (RDS(on)) — 0.63 mOhm (typ at VGS = 10 V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Technology — OptiMOS 5 (trench)
Gambaran Suhu Operasi — -55 C to +175 C
Junction Temperature Max — 175 C
Power Dissipation Max (Pd) — [DATA_NEEDED: Pd max]
Gate Charge Total (Qg) — [DATA_NEEDED: Qg total]
Lead-Free / RoHS — Yes (compliant)

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