IGI65D1414A3MSXUMA1 vs IGLR70R270D2SXUMA1 Perbandingan
Perbandingan bersamaan detil IGI65D1414A3MSXUMA1 dari Infineon dan IGLR70R270D2SXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ AktifInfineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IGI65D1414A3MSXUMA1 | IGLR70R270D2SXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ HEMT | CoolGaN™ G5 |
| Configuration | Half-Bridge (2 FETs in QFN-32, high-side + low-side) | — |
| Drain-Source Voltage (V_DS, max) | 650 V | — |
| On-Resistance (R_DS(on), typ) | 140 mΩ per FET | — |
| Continuous Drain Current | 13.7 A (per Newark listing) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| Technology | Enhancement-mode GaN HEMT (eMode) | Gallium Nitride (GaN) HEMT, enhancement-mode |
| Paket | PG-TIQFN-32-1 (QFN-32, 6x8 mm) | PG-TSON-8-8 (ThinPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40C to +150C (junction) |
| Total Gate Charge (Q_G, typ) | [DATA_NEEDED: Q_G total] | — |
| Output Charge (Q_OSS) | [DATA_NEEDED: Q_OSS value] | — |
| Reverse Recovery Charge (Q_RR) | 0 nC (intrinsic to GaN HEMT, no body diode recovery) | — |
| Thermal Resistance (R_thJA) | [DATA_NEEDED: R_thJA value] | — |
| Typical Applications | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting | — |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| RoHS Compliance | Compliant | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc) | — | 7.3 A |
| Power Dissipation (PD, Tc) | — | 28 W |
| On-State Resistance (RDS(on), typ.) | — | 270 mΩ |
| Gate Drive | — | 0 to 12 V (enhancement-mode, internal gate diode) |
| Wafer Process | — | 200 mm (8-inch) GaN-on-Si |
| Status RoHS | — | Compliant |
| Reverse Recovery Charge (Qrr) | — | 0 nC (no body diode) |