IGLR70R200D2SXUMA1 vs IPL60R180P6AUMA1 Perbandingan
Perbandingan bersamaan detil IGLR70R200D2SXUMA1 dari Infineon dan IPL60R180P6AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IGLR70R200D2SXUMA1 | IPL60R180P6AUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolGaN G5 | — |
| Channel Type | N-Channel | — |
| Technology | GaN HEMT (E-mode, enhancement-mode) | CoolMOS P6 (Superjunction N-channel MOSFET) |
| Drain-Source Voltage (VDS) | 700 V | 600 V |
| Continuous Drain Current (ID, Tc) | 9.3 A | — |
| Power Dissipation (PD, Tc) | 34 W | — |
| On-Resistance (RDS(on), max) | 200 mΩ | — |
| Total Gate Charge (Qg) | 1.26 nC | — |
| Output Capacitance (Coss) | 91 pF | — |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | — |
| Rentang Suhu Kerja | -40 °C to +150 °C | — |
| Paket | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-VSON-4 (Thin-PAK) surface mount |
| RoHS | Compliant | — |
| Gate-Source Voltage (VGS) | — | -20 V to +20 V (max) |
| Continuous Drain Current (ID) at Tc=25°C | — | 22.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | — | 180 mΩ |
| Power Dissipation (Ptot) at Tc=25°C | — | 176 W |
| Rentang Suhu Hubung Kerja | — | -55 °C to +150 °C |
| Storage Temperature Range | — | -55 °C to +150 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: RθJC value] |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V (typical 3.0 V) |
| Tipe Mounting | — | Surface Mount |
| MSL (Moisture Sensitivity Level) | — | MSL 1 (per JEDEC J-STD-020) |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |