IPB027N10N3GATMA1 vs IPD068N10N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPB027N10N3GATMA1 dari Infineon dan IPD068N10N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB027N10N3GATMA1 IPD068N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 3 (Trench MOSFET) OptiMOS 3 (N-Channel, Enhancement Mode)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25°C 120 A —
Power Dissipation (PD) at TC=25°C 300 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mΩ —
On-Resistance RDS(on) typical at VGS=10V 2.7 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and min/max VGS(th) values] —
Rentang Suhu Kerja -55°C to +175°C (TJ) —
Paket PG-TO263-3 (D2PAK) PG-TO252-3 (DPAK, 2 leads + tab)
Tipe Mounting Surface Mount Surface Mount
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: exact °C/W value] —
Single Pulse Avalanche Energy (EAS) [DATA_NEEDED: datasheet EAS figure] —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: moisture sensitivity level] 1
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg at VGS=10V] —
Manufacturer — Infineon Technologies
Part Number — IPD068N10N3GATMA1
Continuous Drain Current (ID) at Tc — 90 A
On-Resistance RDS(on) max — 6.8 mOhm
Power Dissipation (PD) at Tc — 150 W
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V (typical)
Suhu Hubung Kerja — -55 C to +175 C
Channel Type — N-Channel
Configuration — Single
Packing — Tape & Reel (T/R)
Qualification — Industrial (non-automotive)

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