IPB027N10N3GATMA1 vs IPD068N10N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB027N10N3GATMA1 disebabkan oleh Infineon dan IPD068N10N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB027N10N3GATMA1 IPD068N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 3 (Trench MOSFET) OptiMOS 3 (N-Channel, Enhancement Mode)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25°C 120 A —
Power Dissipation (PD) at TC=25°C 300 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mΩ —
On-Resistance RDS(on) typical at VGS=10V 2.7 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and min/max VGS(th) values] —
Gambaran Suhu Operasi -55°C to +175°C (TJ) —
Kemasan PG-TO263-3 (D2PAK) PG-TO252-3 (DPAK, 2 leads + tab)
Jenis Pemasangan Surface Mount Surface Mount
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: exact °C/W value] —
Single Pulse Avalanche Energy (EAS) [DATA_NEEDED: datasheet EAS figure] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: moisture sensitivity level] 1
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg at VGS=10V] —
Manufacturer — Infineon Technologies
Part Number — IPD068N10N3GATMA1
Continuous Drain Current (ID) at Tc — 90 A
On-Resistance RDS(on) max — 6.8 mOhm
Power Dissipation (PD) at Tc — 150 W
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V (typical)
Suhu Hubungan Operasi — -55 C to +175 C
Channel Type — N-Channel
Configuration — Single
Packing — Tape & Reel (T/R)
Qualification — Industrial (non-automotive)

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