IPB107N20N3GATMA1 vs BSC042NE7NS3GATMA1 Perbandingan
Perbandingan bersamaan detil IPB107N20N3GATMA1 dari Infineon dan BSC042NE7NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPB107N20N3GATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 75 V |
| Continuous Drain Current (ID) at Tc | 88 A | 100 A |
| Maximum Power Dissipation (Pd) at Tc | 300 W | — |
| On-Resistance RDS(on) at VGS=10V | 9.6 milliohm (typical, per third-party listing) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj max and operating range] | -55C to +150C |
| Paket | PG-TO263-3 (D2PAK) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Drain, Source, Gate) + Tab | — |
| Status RoHS | Compliant | Compliant |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 |
| Part Number | — | BSC042NE7NS3GATMA1 |
| Continuous Drain Current (ID) at Ta | — | 19 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Level MSL | — | 1 |