IPB107N20N3GATMA1 vs BSC042NE7NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB107N20N3GATMA1 sa pamamagitan ng Infineon at BSC042NE7NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPB107N20N3GATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 75 V |
| Continuous Drain Current (ID) at Tc | 88 A | 100 A |
| Maximum Power Dissipation (Pd) at Tc | 300 W | — |
| On-Resistance RDS(on) at VGS=10V | 9.6 milliohm (typical, per third-party listing) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj max and operating range] | -55C to +150C |
| Packhaging | PG-TO263-3 (D2PAK) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Drain, Source, Gate) + Tab | — |
| Tindminan RoHS | Compliant | Compliant |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 |
| Part Number | — | BSC042NE7NS3GATMA1 |
| Continuous Drain Current (ID) at Ta | — | 19 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Level ng MSL | — | 1 |