IPC100N04S51R7ATMA1 vs IPC100N04S52R8ATMA1 Perbandingan

Perbandingan bersamaan detil IPC100N04S51R7ATMA1 dari Infineon dan IPC100N04S52R8ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Aktif
Infineon
IPC100N04S52R8ATMA1 IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon

IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon

IPC100N04S52R8ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPC100N04S51R7ATMA1 IPC100N04S52R8ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS-5 —
Tipe Transistor N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage VDS 40 V —
Continuous Drain Current ID 100 A (at TC) —
Pulsed Drain Current IDM [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage VGS [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) value] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation PD 115 W (at TC) —
Thermal Resistance RthJC 1.3 K/W —
Suhu Hubung Kerja -55 °C to +175 °C -55C to +175C
Paket PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-34 (TDSON-8 EP)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (260 °C peak reflow) 1 (260C peak reflow)
AEC-Q101 Qualified Yes —
Avalanche Tested 100% tested 100% (per Infineon standard)
Status RoHS Compliant (Green Product) —
Built-in Body Diode Yes —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Tc=100C) — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: VGS(th) typical]
On-State Resistance RDS(on) typ @ VGS=10V — 2.8 mOhm
On-State Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max]
Power Dissipation (PD, Tc=25C) — 75 W
Automotive Qualification — AEC-Q101 qualified
RoHS / Green Product — Yes (RoHS compliant)

Spek dan Sumber

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