IPC100N04S51R7ATMA1 vs IPC100N04S52R8ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPC100N04S51R7ATMA1 disebabkan oleh Infineon dan IPC100N04S52R8ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Aktif
Infineon
IPC100N04S52R8ATMA1 IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon

IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon

IPC100N04S52R8ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPC100N04S51R7ATMA1 IPC100N04S52R8ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS-5 —
Jenis Transistor N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage VDS 40 V —
Continuous Drain Current ID 100 A (at TC) —
Pulsed Drain Current IDM [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage VGS [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) value] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation PD 115 W (at TC) —
Thermal Resistance RthJC 1.3 K/W —
Suhu Hubungan Operasi -55 °C to +175 °C -55C to +175C
Kemasan PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-34 (TDSON-8 EP)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (260 °C peak reflow) 1 (260C peak reflow)
AEC-Q101 Qualified Yes —
Avalanche Tested 100% tested 100% (per Infineon standard)
Status RoHS Compliant (Green Product) —
Built-in Body Diode Yes —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Tc=100C) — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: VGS(th) typical]
On-State Resistance RDS(on) typ @ VGS=10V — 2.8 mOhm
On-State Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max]
Power Dissipation (PD, Tc=25C) — 75 W
Automotive Qualification — AEC-Q101 qualified
RoHS / Green Product — Yes (RoHS compliant)

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