IPC50N04S55R8ATMA1 vs IPC50N04S5L5R5ATMA1 Perbandingan

Perbandingan bersamaan detil IPC50N04S55R8ATMA1 dari Infineon dan IPC50N04S5L5R5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPC50N04S55R8ATMA1 IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPC50N04S55R8ATMA1 IPC50N04S5L5R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) at Tc 50 A —
Power Dissipation (P_D) at Tc 42 W —
R_DS(on) Max (V_GS=10V) 5.8 mΩ —
Output Capacitance (C_oss) 305 pF —
Gate Threshold (V_GS(th)) [DATA_NEEDED: V_GS(th)] —
Rentang Suhu Kerja -55 °C to +175 °C -55 °C to +175 °C
Paket PG-TDSON-8-33 (TDSON EP) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (260 °C peak reflow) —
Automotive Qualification AEC-Q101 —
Avalanche Rating 100% Avalanche Tested 100 % Avalanche Tested
RoHS / Green RoHS compliant, Green Product —
Polarity Enhancement Mode —
Tipe Transistor — N-Channel MOSFET
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
RoHS / REACH — RoHS Compliant (Green Product)

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