IPC70N04S5L4R2ATMA1 vs BSZ0901NSIATMA1 Perbandingan

Perbandingan bersamaan detil IPC70N04S5L4R2ATMA1 dari Infineon dan BSZ0901NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPC70N04S5L4R2ATMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS trench N-channel MOSFET
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
Paket PG-TDSON-8-34 (Surface Mount) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Operating Temperature (Tj) -55°C to +175°C —
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% (60 A production test) —
Status RoHS Compliant (Green Product) Compliant
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Jumlah Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Rentang Suhu Kerja — -55 C to +150 C (typical MOSFET range)
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

Spek dan Sumber

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