IPD034N06N3GATMA1 vs IPD30N10S3L34ATMA1 Perbandingan

Perbandingan bersamaan detil IPD034N06N3GATMA1 dari Infineon dan IPD30N10S3L34ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD034N06N3GATMA1 IPD30N10S3L34ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Technology N-Channel Trench MOSFET (OptiMOS 3) —
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) at Tc 100 A —
Maximum Power Dissipation (Ptot) 167 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm —
Gate Threshold Voltage VGS(th) 4 V at 93 uA —
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] —
Paket PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK-2 / SC-63)
Tipe Mounting Surface Mount Surface Mount
Pin Configuration 3-Pin (2 + Tab) —
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] —
Status RoHS Compliant (Pb-free green finish) —
Automotive Qualified Yes (per Infineon product page) —
Level MSL [DATA_NEEDED: MSL rating] 1 (JEDEC J-STD-020, 260°C peak reflow)
Product Family — OptiMOS-T2
Tipe Transistor — N-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID, Tc=25°C) — 30 A
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc=25°C) — 57 W
Drain-Source On-Resistance (RDS(on) max) — 31 mΩ @ VGS=10 V
Gate-Source Threshold Voltage (VGS(th) typ) — 1.7 V (range 1.0 V to 2.5 V)
Total Gate Charge (Qg typ) — 23 nC
Suhu Hubung Kerja — -55°C to +175°C
Automotive Qualification — AEC-Q101 qualified
RoHS / REACH — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — 100% Avalanche tested

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon