IPD042P03L3GATMA1 vs IRFR5305TRPBF Perbandingan
Perbandingan bersamaan detil IPD042P03L3GATMA1 dari Infineon dan IRFR5305TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD042P03L3GATMA1 | IRFR5305TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID, Tc=25°C) | -70 A | — |
| Pulsed Drain Current (IDM) | -280 A | — |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ | — |
| RDS(on) max @ VGS = -4.5 V | [DATA_NEEDED: RDS(on) @ -4.5 V] | — |
| Gate Threshold Voltage (VGS(th)) | -1.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation (PD @ Tc=25°C) | 150 W | — |
| Single-Pulse Avalanche Energy (EAS) | 290 mJ | 270 mJ |
| Rentang Suhu Kerja | -55°C to +175°C (TJ) | -55 C to +175 C |
| Paket | PG-TO252-3 (DPAK) | TO-252AA (DPAK) |
| Technology | OptiMOS™ P (Trench) | HEXFET (IR MOSFET) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant (Pb-free PBF suffix) |
| Level MSL | 1 | 1 |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | 31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | — | 110 W |
| Lead-Free Finish | — | Yes (PBF suffix) |