IPD042P03L3GATMA1 vs IRFR5305TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD042P03L3GATMA1 disebabkan oleh Infineon dan IRFR5305TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD042P03L3GATMA1 | IRFR5305TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID, Tc=25°C) | -70 A | — |
| Pulsed Drain Current (IDM) | -280 A | — |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ | — |
| RDS(on) max @ VGS = -4.5 V | [DATA_NEEDED: RDS(on) @ -4.5 V] | — |
| Gate Threshold Voltage (VGS(th)) | -1.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation (PD @ Tc=25°C) | 150 W | — |
| Single-Pulse Avalanche Energy (EAS) | 290 mJ | 270 mJ |
| Gambaran Suhu Operasi | -55°C to +175°C (TJ) | -55 C to +175 C |
| Kemasan | PG-TO252-3 (DPAK) | TO-252AA (DPAK) |
| Technology | OptiMOS™ P (Trench) | HEXFET (IR MOSFET) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant (Pb-free PBF suffix) |
| Aras MSL | 1 | 1 |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | 31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | — | 110 W |
| Lead-Free Finish | — | Yes (PBF suffix) |