IPD082N10N3GATMA1 vs IPD30N10S3L34ATMA2 Perbandingan

Perbandingan bersamaan detil IPD082N10N3GATMA1 dari Infineon dan IPD30N10S3L34ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD082N10N3GATMA1 IPD30N10S3L34ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD082N10N3GATMA1 —
Manufacturer Infineon Technologies —
Technology OptiMOS 3 (Trench N-Channel) OptiMOS-T (trench)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ Tc=25°C 80 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) @ Tc=25°C 125 W —
Suhu Hubung Kerja -55°C to +175°C -55 C to +175 C
Paket / Case PG-TO252-3 (DPAK), surface mount —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) —
Status RoHS Compliant Compliant
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) —
Lead-Free Yes —
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D, Tc) — 30 A
Pulsed Drain Current (I_DM) — 180 A
Power Dissipation (P_D, Tc) — 57 W
R_DS(on) max at V_GS=10V — 31 mOhm (typ)
Gate Threshold Voltage V_GS(th) max — 2.4 V
Total Gate Charge (Qg) max — 31 nC
Package / Supplier Device Package — PG-TO252-3-11 (DPAK)
Pin / Tab Count — 3 (2 + Tab)
Automotive Qualification — AEC-Q101

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