IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
MPN: IPD082N10N3GATMA1 ✓ AktifIPD082N10N3GATMA1 Ringkasan
An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of an n-type epitaxial layer under the gate oxide to form a conducting channel between drain and source. Within the broader semiconductor taxonomy, the part belongs to the discrete MOSFET family, which itself sits inside the power-transistor category of discrete semiconductors. Infineon's OptiMOS family is the company's flagship 40 V-300 V trench MOSFET line, optimized to minimize both on-state resistance (RDS(on)) per unit silicon area and figure-of-merit (RDS(on) × Qg), reducing both conduction loss and gate-drive loss versus planar MOSFET generations.
Key features include 100 V drain-source breakdown voltage, 80 A continuous drain current at case temperature 25°C, maximum RDS(on) of 8.2 mΩ at VGS=10 V, low gate charge Qg for fast switching transitions, an avalanche-rated single-pulse body diode, and a low thermal-resistance DPAK surface-mount footprint. The device is RoHS compliant and characterized for -55°C to +175°C junction temperature operation.
OptiMOS 3 technology uses a deep-trench cell geometry combined with a thin epitaxial layer to shrink the per-cell pitch and increase channel density, yielding approximately 30% lower RDS(on) and FOM versus the prior OptiMOS 2 generation. This translates directly into cooler-running converters, smaller magnetics, and the ability to push switching frequencies higher without efficiency penalty - critical for telecom bricks, server VRMs, and solar micro-inverters.
Typical applications include primary-side and synchronous-rectification stages in 48 V telecom and server SMPS, e-bike and low-voltage EV motor controllers, Class-D audio amplifier output stages, solar MPPT boost and buck converters, and battery protection MOSFETs in 48 V e-mobility packs. The wide VDS rating also makes it suitable as a load switch and hot-swap controller in industrial 24 V and 48 V backplanes.
Design considerations include keeping the gate drive loop area minimal to suppress ringing, placing the gate-source pull-down resistor (typically 10 kΩ) close to the IC, ensuring the heat-sink tab area exceeds 1 cm² of copper pour with thermal vias, and observing the safe operating area (SOA) at high VDS and pulsed-drain-current combinations. The -Q suffix variant is AEC-Q101 qualified for automotive use; this GATMA1 part is industrial/consumer grade.
This page synthesizes live distributor pricing, drop-in cross-brand equivalents from parametric cross-reference tools, and practical design guidance not consolidated in any single datasheet or distributor listing - giving procurement and design engineers a one-stop decision resource for the IPD082N10N3GATMA1.
Alternatif penggantian untuk IPD082N10N3GATMA1 — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.
Variasi di dalam seri ini
Model-series yang sama yang kompatibel dengan penggantian IPD082N10N3GATMA1 (sama faktor bentuk dan footprint) — berbeda di dalam Package, Technology, Operating Temperature Range, MSL Level, Product Family.
IPD12CN10NGBUMA1
✅ Drop-In📋 Alternatif referensi (tidak dalam katalog)
BSC076N06NS3GATMA1
✅ Drop-InKontak untuk harga
Lihat Datasheet →BSC0901NSATMA1
✅ Drop-InKontak untuk harga
Lihat Datasheet →BSC0902NSIATMA1
✅ Drop-InKontak untuk harga
Lihat Datasheet →BSC0906NSATMA1
✅ Drop-InKontak untuk harga
Lihat Datasheet →IPD082N10N3GATMA1 Rating Maksimal & Karakteristik Listrik
| Part Number | IPD082N10N3GATMA1 |
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 3 (Trench N-Channel) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) @ Tc=25°C | 80 A |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΩ |
| Power Dissipation (PD) @ Tc=25°C | 125 W |
| Suhu Hubung Kerja | -55°C to +175°C |
| Paket / Case | PG-TO252-3 (DPAK), surface mount |
| Tipe Mounting | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source) |
| Status RoHS | Compliant |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) |
| Lead-Free | Yes |
| Level MSL | 1 (per JEDEC J-STD-020) |
Konfigurasi Pin IPD082N10N3GATMA1
| Pin produk 1 | Gate — Gate drive input; apply VGS=10 V to fully enhance the channel |
| Pin produk 2 | Drain — Drain terminal; high-voltage switching node, also electrically bonded to the DPAK tab |
| Pin produk 3 | Source — Source terminal; reference for gate drive; return path for load current |
| Pin produk Tab | Drain — Metal tab electrically connected to pin 2 (Drain); provides thermal path and main high-current connection |
Area Operasi Aman (DC, Tj=25°C)
Aplikasi Umum
IPD082N10N3GATMA1 cocok untuk 6 aplikasis: 48 V Synchronous Rectification in Telecom SMPS, E-bike / Low-Voltage EV Motor Drive, Class-D Audio Amplifier Output Stage, Solar MPPT Boost Converter Power Stage, 48 V Battery Pack Protection MOSFET, Industrial 24 V-72 V Hot-Swap / Load Switch.
48 V Synchronous Rectification in Telecom SMPS
The IPD082N10N3GATMA1 sits in the secondary-side synchronous-rectifier position of an isolated 48 V telecom DC-DC brick, where the 100 V VDS rating provides 2x headroom above 48 V nominal and ample margin for transient spikes on the rectifier nodes. The 8.2 mΩ RDS(on) drops conduction loss versus a Schottky-diode rectifier stage - at 30 A output, the IRMS is roughly 18-22 A and the MOSFET loss is ~3-4 W versus 6-8 W for an equivalent diode bridge, lifting system efficiency by 1-2 percentage points. The 125 W PD rating and DPAK thermal pad support a 50 A continuous secondary without forced airflow. Use a UCC24612 or similar SR controller to drive the gate, and add a 10 kΩ gate-source pull-down to prevent spurious turn-on during the primary-side switching transition.
Direkomendasikan
E-bike / Low-Voltage EV Motor Drive
In a 36 V or 48 V e-bike hub-motor or low-voltage EV inverter, the IPD082N10N3GATMA1 is used as the low-side switching element in a three-phase half-bridge. The 100 V VDS rating comfortably handles 48 V battery plus regenerative-kickback transients up to 80 V, while the 80 A continuous ID rating covers the 25-30 A RMS phase currents typical of 250-500 W motor systems. OptiMOS 3's low FOM (RDS(on) × Qg) keeps switching loss low at 20-50 kHz PWM frequencies, reducing heatsink mass and extending ride time. For automotive-grade variants on the same footprint, select the AEC-Q101 qualified IPD082N10N3 G -Q suffix; this industrial-grade part is suitable for non-automotive e-bike and light-mobility applications.
Direkomendasikan
Class-D Audio Amplifier Output Stage
The IPD082N10N3GATMA1 is a strong fit for the half-bridge output stage of a 200-500 W Class-D audio amplifier powered from a ±35 V or single 48 V rail. Its 8.2 mΩ RDS(on) minimizes voltage drop across the output device, preserving audio dynamic range, while the 100 V VDS rating allows direct connection to a 48 V rail with full avalanche headroom for back-EMF from reactive loudspeaker loads. OptiMOS 3's fast body-diode recovery and low Qrr reduce dead-time distortion and crossover artifacts at 250-500 kHz PWM switching. Drive the gate with a dedicated Class-D controller such as the IRS2092 with bootstrap gate-drive supply. The DPAK tab can dissipate 30-40 W continuous with 4 sq-in of copper-pour heatsinking on a 2-oz PCB.
Direkomendasikan
Solar MPPT Boost Converter Power Stage
In a 1-3 kW residential solar MPPT boost converter stepping 20-60 V PV input up to a 400 V DC bus, the IPD082N10N3GATMA1 is placed as the high-side or low-side switching element in the boost stage. The 100 V VDS rating handles 60 V panel input plus ringing with margin, while the 80 A continuous ID rating supports 25-35 A continuous boost currents at full power. The low RDS(on) of 8.2 mΩ keeps conduction loss under 10 W at 35 A, and OptiMOS 3's low Qg enables 50-100 kHz switching with manageable gate-drive losses. The DPAK package provides a thermal pad for direct soldering to a copper-pour heatsink. Pair with a CoolSET or TL2843 current-mode controller and use a UCC27714 high-side gate driver for the high-side position.
Direkomendasikan
48 V Battery Pack Protection MOSFET
In a 48 V Li-ion or LiFePO4 battery pack for e-mobility and telecom backup, the IPD082N10N3GATMA1 serves as the high-side or low-side disconnect MOSFET that opens under fault conditions. The 100 V VDS rating is well above the 58 V max charge voltage of a 16S Li-ion pack, while the 80 A continuous ID supports 50-60 A continuous discharge and 200-300 A peak pulses with sufficient margin. Its 8.2 mΩ RDS(on) keeps the voltage drop during normal conduction under 0.5 V at 60 A, preserving usable battery capacity. The DPAK surface-mount package simplifies PCB assembly and supports a high-current PCB trace to the tab. Use a battery-management IC such as the TLE9012 or similar to control the gate, with an active current-limit circuit for short-circuit protection.
Direkomendasikan
Industrial 24 V-72 V Hot-Swap / Load Switch
As a hot-swap or eFuse element on a 24 V, 36 V, 48 V, or 72 V industrial backplane, the IPD082N10N3GATMA1 provides inrush-current limiting and disconnect under fault. The 100 V VDS rating handles 72 V nominal plus transient ringing, while the 80 A continuous ID rating supports a 30-40 A continuous load with substantial margin. The 8.2 mΩ RDS(on) produces only 0.3-0.4 V drop at 40 A, well within ATX-style 12 V tolerance and well below 48 V PoE voltage-regulation limits. Drive the gate from a hot-swap controller (e.g., LM5060 or similar) using constant-current charging to soft-start the load. The DPAK package handles the inrush surge energy when bolted onto a capacitive load bank.
Direkomendasikan
Ringkasan Produk Direkomendasikan
Data referensi engineering untuk IPD082N10N3GATMA1 — pembandingan, panduan desain, dan informasi konformitas.
Panduan Pemilihan
Pembandingan dengan Alternatif
| Parameter Umum | Produk Ini | IPD12CN10NGBUMA1 | BSC076N06NS3GATMA1 | BSC0901NSATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Drain-Source Voltage VDS | 100 V | 100 V - same | 60 V - lower (-40%) | 100 V - same |
| RDS(on) max @ VGS=10 V | 8.2 mΩ | 12 mΩ (+46%) | 7.6 mΩ (-7% better) | 9 mΩ (+10%) |
| Technology Family | OptiMOS 3 (Trench) | OptiMOS 3 (Trench) | OptiMOS 3 (Trench) | OptiMOS 3 (Trench) |
Diferensiator Kunci
- OptiMOS 3 trench technology with 30% lower RDS(on) versus prior generation (vsIRF520N (planar MOSFET, TO-220AB, ~200 mΩ RDS(on)))
- Best-in-class RDS(on) × FOM balance in 100 V DPAK OptiMOS 3 family (vsIPD12CN10NGBUMA1 (same family, 12 mΩ RDS(on)))
- Pin-compatible with multiple Infineon 100 V DPAK alternatives for sourcing flexibility (vsBSC076N06NS3GATMA1 (60 V VDS, 7.6 mΩ RDS(on)))
Catatan Desain
The PG-TO252-3 (DPAK) tab is electrically bonded to the Drain pin and serves as the primary thermal path. Estimated: with a 1 sq-in copper-pour heatsink on a 2-oz FR-4 PCB and no forced airflow, RθJA is roughly 40-50 °C/W, allowing continuous dissipation of about 2-2.5 W at TA=25°C and 1-1.5 W at TA=85°C. For full 125 W (Tc=25°C) operation, a forced-air or attached heatsink is mandatory. Always solder the tab to a continuous copper pour with multiple thermal vias to the internal ground plane.
Recommended land pattern for PG-TO252-3 per Infineon's footprint IPC-7351: pad dimensions approximately 2.3 mm × 1.1 mm for the gate and source pads, with a 6.5 mm × 7.4 mm thermal pad under the tab. Use a minimum of 4 thermal vias (0.3 mm drill, 0.5 mm pitch) under the tab to the opposite-side ground plane. Place the gate drive loop area below 50 mm² to minimize switching ringing, and add a 10 kΩ gate-source pull-down resistor (placed within 5 mm of the gate pin) to prevent spurious turn-on during the high-side transition.
Common design pitfalls with the IPD082N10N3GATMA1: (1) exceeding VDS during avalanche - add an RC snubber (10 Ω + 1 nF) on the switching node if the ringing overshoots 80 V; (2) operating above the body-diode's reverse-recovery limit - this part is not optimized for hard-switched body-diode conduction; use a synchronous rectification controller with dead-time control; (3) neglecting the safe operating area at high VDS / high ID - do not operate continuously above the DC SOA curve; (4) mistaking the DPAK tab for an isolated thermal pad - it is electrically live at Drain potential and must be connected to the same node as pin 2.
Informasi Konformitas
RoHS compliant per Infineon product page. Not AEC-Q100 or AEC-Q101 qualified (industrial/consumer grade); for automotive, select the AEC-Q101 qualified variant. MSL Level 1 per JEDEC J-STD-020.
