IPD082N10N3GATMA1 vs IPD70N10S3L12ATMA1 Perbandingan

Perbandingan bersamaan detil IPD082N10N3GATMA1 dari Infineon dan IPD70N10S3L12ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD70N10S3L12ATMA1 IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon

IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon

IPD70N10S3L12ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD082N10N3GATMA1 IPD70N10S3L12ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD082N10N3GATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 3 (Trench N-Channel) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ Tc=25°C 80 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 180 A
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) @ Tc=25°C 125 W —
Suhu Hubung Kerja -55°C to +175°C —
Paket / Case PG-TO252-3 (DPAK), surface mount —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) 3 (Drain, Gate, Source + tab)
Status RoHS Compliant Compliant (Green Product)
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) —
Lead-Free Yes —
Level MSL 1 (per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow)
Product Family — OptiMOS-T
Tipe Transistor — N-Channel MOSFET (Enhancement Mode)
Continuous Drain Current (ID, Tc) — 70 A
Power Dissipation (Ptot, Tc) — 125 W
On-State Resistance RDS(on) typ @ VGS=10V — 11.5 mΩ
Rentang Suhu Kerja — -55 °C to +175 °C (junction)
Paket — PG-TO252-3-11 (DPAK)
Automotive Qualification — AEC-Q101 qualified
Avalanche Rating — 100 % avalanche tested
Avalanche Energy (Single Pulse) — [DATA_NEEDED: EAS value]

Spek dan Sumber

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