IPD200N15N3GATMA1 vs IPD90N06S407ATMA2 Perbandingan

Perbandingan bersamaan detil IPD200N15N3GATMA1 dari Infineon dan IPD90N06S407ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD200N15N3GATMA1 IPD90N06S407ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPD200N15N3GATMA1 —
Technology OptiMOS 3 (trench) —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID, TC=25C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 20 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD, TC=25C) 150 W —
Suhu Hubung Kerja -55 C to +175 C -55 C to +175 C
Paket PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) —
Level MSL 1 —
Status RoHS Compliant —
Lead-Free Yes —
FET Type — N-Channel Enhancement Mode
Drain-to-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D at T_C) — 90 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
R_DS(on) Max at V_GS=10 V, I_D=90 A — 6.9 mOhm
Gate Threshold Voltage (V_GS(th)) — 4 V at 40 uA
Total Gate Charge (Q_G) at V_GS=10 V — 56 nC
Maximum Power Dissipation (P_D at T_C) — 79 W
Storage Temperature — [DATA_NEEDED: storage temperature range]
Lead-Free / RoHS — Yes (Green Product)
MSL (Moisture Sensitivity Level) — MSL1 (up to 260 C peak reflow)
Automotive Qualification — AEC-Q101 Qualified
Avalanche Rating — 100% Avalanche Tested

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