IPD200N15N3GATMA1 vs IPD90N06S407ATMA2 比較
詳細並排比較 IPD200N15N3GATMA1 由 Infineon 與 IPD90N06S407ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD200N15N3GATMA1 | IPD90N06S407ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD200N15N3GATMA1 | — |
| Technology | OptiMOS 3 (trench) | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, TC=25C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 20 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD, TC=25C) | 150 W | — |
| 工作接面溫度 | -55 C to +175 C | -55 C to +175 C |
| 封裝 | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| MSL 等級 | 1 | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D at T_C) | — | 90 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | — | 6.9 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | 4 V at 40 uA |
| Total Gate Charge (Q_G) at V_GS=10 V | — | 56 nC |
| Maximum Power Dissipation (P_D at T_C) | — | 79 W |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Lead-Free / RoHS | — | Yes (Green Product) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (up to 260 C peak reflow) |
| Automotive Qualification | — | AEC-Q101 Qualified |
| Avalanche Rating | — | 100% Avalanche Tested |