IPD30N08S2L21ATMA1 vs BSZ130N03LSGATMA1 Perbandingan

Perbandingan bersamaan detil IPD30N08S2L21ATMA1 dari Infineon dan BSZ130N03LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD30N08S2L21ATMA1 BSZ130N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at Tc=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-State Resistance (RDS(on)) at VGS=10 V 26 milliohm (typ) —
Gate Threshold Voltage (VGS(th)) Logic-level (L series) —
Gate Charge (Qg) typ 56 nC —
Power Dissipation (PD) at Tc=25C 136 W —
Rentang Suhu Kerja -55C to +175C -55 C to +150 C (junction)
Maximum Junction Temperature +175C —
Paket PG-TO252-3-11 (DPAK-2) PG-TSDSON-8 (8-PowerTDFN, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Drain tab + Gate + Source) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Level MSL 1 1 (per JEDEC J-STD-020)
Part Family — OptiMOS 25V / 30V
Polarity / Channel Type — N-Channel Enhancement Mode
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Ta=25 C) — 10 A
Arus Alir Berlanjut (TC=25°C) — 35 A
On-State Resistance Rds(on) max @ Vgs=10V — 13 mOhm
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA — 2.2 V
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 25 W
Lead-Free — Yes
Bebas Halogen — Yes
Qualification — Industrial / Commercial (non-automotive)

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