IPD30N10S3L34ATMA1 vs IPD35N10S3L26ATMA1 Perbandingan

Perbandingan bersamaan detil IPD30N10S3L34ATMA1 dari Infineon dan IPD35N10S3L26ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD30N10S3L34ATMA1 IPD35N10S3L26ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 —
Tipe Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc=25°C) 30 A —
Pulsed Drain Current (IDM) 180 A 180 A
Power Dissipation (PD, Tc=25°C) 57 W —
Drain-Source On-Resistance (RDS(on) max) 31 mΩ @ VGS=10 V —
Gate-Source Threshold Voltage (VGS(th) typ) 1.7 V (range 1.0 V to 2.5 V) —
Total Gate Charge (Qg typ) 23 nC —
Suhu Hubung Kerja -55°C to +175°C -55°C to +175°C
Paket PG-TO252-3-11 (DPAK-2 / SC-63) PG-TO252-3-11 (DPAK-2)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Level MSL 1 (JEDEC J-STD-020, 260°C peak reflow) MSL1 (up to 260°C peak reflow)
RoHS / REACH Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated 100% Avalanche tested —
Part Number — IPD35N10S3L26ATMA1
Technology — OptiMOS-T (N-channel enhancement mode trench MOSFET)
Continuous Drain Current (ID) at TC=25°C — 35 A
On-Resistance RDS(on) max at VGS=10 V — 26 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.7 V
Continuous Power Dissipation (PD) at TC=25°C — 71 W
Avalanche Tested — 100% avalanche tested
RoHS / Halogen-Free — RoHS compliant, Green product (halogen-free)
Typical Gate Charge (Qg) — [DATA_NEEDED: typical Qg from datasheet]

Spek dan Sumber

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