IPD30N10S3L34ATMA1 vs IPD35N10S3L26ATMA1 Comparison

Detailed side-by-side comparison of IPD30N10S3L34ATMA1 by Infineon and IPD35N10S3L26ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD30N10S3L34ATMA1 IPD35N10S3L26ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 —
Transistor Type N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc=25°C) 30 A —
Pulsed Drain Current (IDM) 180 A 180 A
Power Dissipation (PD, Tc=25°C) 57 W —
Drain-Source On-Resistance (RDS(on) max) 31 mΩ @ VGS=10 V —
Gate-Source Threshold Voltage (VGS(th) typ) 1.7 V (range 1.0 V to 2.5 V) —
Total Gate Charge (Qg typ) 23 nC —
Operating Junction Temperature -55°C to +175°C -55°C to +175°C
Package PG-TO252-3-11 (DPAK-2 / SC-63) PG-TO252-3-11 (DPAK-2)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
MSL Level 1 (JEDEC J-STD-020, 260°C peak reflow) MSL1 (up to 260°C peak reflow)
RoHS / REACH Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated 100% Avalanche tested —
Part Number — IPD35N10S3L26ATMA1
Technology — OptiMOS-T (N-channel enhancement mode trench MOSFET)
Continuous Drain Current (ID) at TC=25°C — 35 A
On-Resistance RDS(on) max at VGS=10 V — 26 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.7 V
Continuous Power Dissipation (PD) at TC=25°C — 71 W
Avalanche Tested — 100% avalanche tested
RoHS / Halogen-Free — RoHS compliant, Green product (halogen-free)
Typical Gate Charge (Qg) — [DATA_NEEDED: typical Qg from datasheet]

Datasheets & Resources

Browse All Products Create BOM Request Quote