IPD30N10S3L34ATMA2 vs IPD33CN10NGATMA1 Perbandingan
Perbandingan bersamaan detil IPD30N10S3L34ATMA2 dari Infineon dan IPD33CN10NGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD30N10S3L34ATMA2 | IPD33CN10NGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | OptiMOS (Trench) |
| Automotive Qualification | AEC-Q101 | — |
| Level MSL | [DATA_NEEDED: MSL level] | 1 |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 27 A |
| Power Dissipation (PD, Tc) | — | 58 W |
| Paket | — | PG-TO252-3 (DPAK), Surface Mount |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Rentang Suhu Kerja | — | -55C to +175C (TJ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Lead-Free | — | Yes |