IPD30N10S3L34ATMA2 vs IPD33CN10NGATMA1 Comparison
Detailed side-by-side comparison of IPD30N10S3L34ATMA2 by Infineon and IPD33CN10NGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
IPD33CN10NGATMA1 β ActiveSpecification Comparison
| Parameter | IPD30N10S3L34ATMA2 | IPD33CN10NGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.32 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D, Tc) | 30 A | β |
| Pulsed Drain Current (I_DM) | 180 A | β |
| Power Dissipation (P_D, Tc) | 57 W | β |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | β |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | β |
| Total Gate Charge (Qg) max | 31 nC | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | β |
| Technology | OptiMOS-T (trench) | OptiMOS (Trench) |
| Automotive Qualification | AEC-Q101 | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc) | β | 27 A |
| Power Dissipation (PD, Tc) | β | 58 W |
| Package | β | PG-TO252-3 (DPAK), Surface Mount |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Operating Temperature Range | β | -55C to +175C (TJ) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg] |
| Lead-Free | β | Yes |