IPD30N10S3L34ATMA2 vs IPD90P04P4L04ATMA2 Perbandingan
Perbandingan bersamaan detil IPD30N10S3L34ATMA2 dari Infineon dan IPD90P04P4L04ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD30N10S3L34ATMA2 | IPD90P04P4L04ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Level MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Part Number | — | IPD90P04P4L04ATMA2 |
| Manufacturer | — | Infineon Technologies |
| Family | — | OptiMOS-P2 |
| Channel Type | — | P-Channel |
| Drain-Source Voltage (Vds) | — | -40 V |
| Continuous Drain Current (Id) at Tc=25C | — | -90 A |
| Power Dissipation (Pd) at Tc=25C | — | 125 W |
| On-State Resistance Rds(on) typ at Vgs=-10V | — | 4.3 mOhm |
| Gate Threshold Voltage Vgs(th) typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Maximum Junction Temperature | — | 175 C |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Paket | — | PG-TO252-3-313 (DPAK) |
| Jumlah Pin | — | 3 (2 + Tab) |