IPD35N10S3L26ATMA1 vs IPD30N10S3L34ATMA1 Perbandingan

Perbandingan bersamaan detil IPD35N10S3L26ATMA1 dari Infineon dan IPD30N10S3L34ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD35N10S3L26ATMA1 IPD30N10S3L34ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD35N10S3L26ATMA1 —
Technology OptiMOS-T (N-channel enhancement mode trench MOSFET) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25°C 35 A —
Pulsed Drain Current (IDM) 180 A 180 A
On-Resistance RDS(on) max at VGS=10 V 26 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 1.7 V —
Continuous Power Dissipation (PD) at TC=25°C 71 W —
Suhu Hubung Kerja -55°C to +175°C -55°C to +175°C
Paket PG-TO252-3-11 (DPAK-2) PG-TO252-3-11 (DPAK-2 / SC-63)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260°C peak reflow) 1 (JEDEC J-STD-020, 260°C peak reflow)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Avalanche Tested 100% avalanche tested —
RoHS / Halogen-Free RoHS compliant, Green product (halogen-free) —
Typical Gate Charge (Qg) [DATA_NEEDED: typical Qg from datasheet] —
Product Family — OptiMOS-T2
Tipe Transistor — N-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID, Tc=25°C) — 30 A
Power Dissipation (PD, Tc=25°C) — 57 W
Drain-Source On-Resistance (RDS(on) max) — 31 mΩ @ VGS=10 V
Gate-Source Threshold Voltage (VGS(th) typ) — 1.7 V (range 1.0 V to 2.5 V)
Total Gate Charge (Qg typ) — 23 nC
RoHS / REACH — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — 100% Avalanche tested

Spek dan Sumber

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