IPD35N10S3L26ATMA1 vs IPD30N10S3L34ATMA1 비교
다음의 상세 나란히 비교: IPD35N10S3L26ATMA1 제조: Infineon 및 IPD30N10S3L34ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPD35N10S3L26ATMA1 | IPD30N10S3L34ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.81 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD35N10S3L26ATMA1 | — |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 35 A | — |
| Pulsed Drain Current (IDM) | 180 A | 180 A |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V | — |
| Continuous Power Dissipation (PD) at TC=25°C | 71 W | — |
| 동작 접합 온도 | -55°C to +175°C | -55°C to +175°C |
| 패키지 | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2 / SC-63) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | MSL1 (up to 260°C peak reflow) | 1 (JEDEC J-STD-020, 260°C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) | — |
| Typical Gate Charge (Qg) | [DATA_NEEDED: typical Qg from datasheet] | — |
| Product Family | — | OptiMOS-T2 |
| 트랜지스터 유형 | — | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID, Tc=25°C) | — | 30 A |
| Power Dissipation (PD, Tc=25°C) | — | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | — | 31 mΩ @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | — | 23 nC |
| RoHS / REACH | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | 100% Avalanche tested |