IPD50N10S3L16ATMA1 vs ISC015N06NM5ATMA1 Perbandingan
Perbandingan bersamaan detil IPD50N10S3L16ATMA1 dari Infineon dan ISC015N06NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon
IPD50N10S3L16ATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPD50N10S3L16ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD50N10S3L16ATMA1 | — |
| Series | OptiMOS-T | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 50 A | — |
| Pulsed Drain Current (I_DM) | 200 A | — |
| R_DS(on) max @ V_GS=10V | 15 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 2.5 V (typ) | — |
| Power Dissipation (P_D, T_C=25C) | 100 W | — |
| Paket | PG-TO252-3-11 (DPAK) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C | -55 C to +175 C |
| Automotive Qualification | AEC-Q101 | — |
| Status RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | — | 1 |