IPD50P04P4L11ATMA2 vs IRFR5410TRRPBF Perbandingan

Perbandingan bersamaan detil IPD50P04P4L11ATMA2 dari Infineon dan IRFR5410TRRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD50P04P4L11ATMA2 IRFR5410TRRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor P-Channel MOSFET, enhancement mode —
Drain-Source Voltage VDS -40 V —
Continuous Drain Current ID (TC = 25 °C) -50 A —
On-State Resistance RDS(on) (VGS = -10 V) 10.6 mΩ typical —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) -1.0 V to -2.5 V typical —
Typical Gate Charge Qg 45 nC —
Power Dissipation PD (TC = 25 °C) 58 W —
Suhu Hubung Kerja -55 °C to +175 °C -55C to +150C
Paket PG-TO252-3-313 (DPAK), surface mount TO-252AA (DPAK)
Jumlah Pin 3 (Drain / Tab / Source / Gate) —
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL rating] —
Polarity — P-Channel
FET Type — MOSFET (Metal Oxide Semiconductor)
Technology — HEXFET (5th Generation)
VDS (Drain-Source Voltage) — -100 V
VGS (Gate-Source Voltage) — ±20 V
VGS(th) (Gate Threshold) — -2 V to -4 V
Continuous Drain Current (ID) at Tc=25C — -13 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at 100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=-10V — 205 mΩ
RDS(on) typical at VGS=-10V — 26 mΩ (per Mouser listing for IRFR5410TRPBF)
Total Gate Charge (Qg) — 70 nC
Power Dissipation (Pd) at Tc=25C — 66 W
Avalanche Rated — Yes
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free)

Spek dan Sumber

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