IPD60R210PFD7SAUMA1 vs IPL60R060CFD7AUMA1 Perbandingan

Perbandingan bersamaan detil IPD60R210PFD7SAUMA1 dari Infineon dan IPL60R060CFD7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD60R210PFD7SAUMA1 IPL60R060CFD7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS PFD7 —
Technology Superjunction (CoolMOS) N-Channel Power MOSFET —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc) 16 A —
On-Resistance (RDS(on), max) 210 mOhm —
Power Dissipation (Ptot, Tc=25C) 64 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Package Type TO-252 (DPAK) —
Manufacturer Package Designator PG-TO252-3-344 —
Tipe Mounting Surface Mount (SMT) Surface Mount
Pin Configuration 3-Pin (2+Tab) - Gate, Drain (tab), Source —
Rentang Suhu Kerja -55C to +150C (TJ) -40 °C to +150 °C
Lead-Free / RoHS Yes (compliant) —
Application Segment Consumer-grade SMPS —
Series — CoolMOS™ CFD7
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D, Tc) — 40 A
Power Dissipation (P_D, Tc) — 219 W
R_DS(on) (max) at V_GS = 10 V — 60 mΩ
R_DS(on) (typ, datasheet) — 48 mΩ
Gate Charge (Q_G, typ) at V_GS = 10 V — 79 nC
Input Capacitance (C_iss) — 3193 pF
Output Capacitance (C_oss) — 62 pF
Gate-Source Voltage (V_GS) — ±20 V (max)
Gate Threshold Voltage (V_GS(th), typ) — 4.5 V
Paket — PG-VSON-4-1 (Surface Mount)
Level MSL — [DATA_NEEDED: MSL Level]
Status RoHS — Compliant

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