IPD60R210PFD7SAUMA1 vs IPL60R060CFD7AUMA1 比較

詳細並排比較 IPD60R210PFD7SAUMA1 由 Infineon 與 IPL60R060CFD7AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD60R210PFD7SAUMA1 IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 ✓ 啟用中
Infineon
IPL60R060CFD7AUMA1 IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon

IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon

IPL60R060CFD7AUMA1 ✓ 啟用中

規格比較

參數 IPD60R210PFD7SAUMA1 IPL60R060CFD7AUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS PFD7 —
Technology Superjunction (CoolMOS) N-Channel Power MOSFET —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc) 16 A —
On-Resistance (RDS(on), max) 210 mOhm —
Power Dissipation (Ptot, Tc=25C) 64 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Package Type TO-252 (DPAK) —
Manufacturer Package Designator PG-TO252-3-344 —
安裝類型 Surface Mount (SMT) Surface Mount
Pin Configuration 3-Pin (2+Tab) - Gate, Drain (tab), Source —
工作溫度範圍 -55C to +150C (TJ) -40 °C to +150 °C
Lead-Free / RoHS Yes (compliant) —
Application Segment Consumer-grade SMPS —
Series — CoolMOS™ CFD7
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D, Tc) — 40 A
Power Dissipation (P_D, Tc) — 219 W
R_DS(on) (max) at V_GS = 10 V — 60 mΩ
R_DS(on) (typ, datasheet) — 48 mΩ
Gate Charge (Q_G, typ) at V_GS = 10 V — 79 nC
Input Capacitance (C_iss) — 3193 pF
Output Capacitance (C_oss) — 62 pF
Gate-Source Voltage (V_GS) — ±20 V (max)
Gate Threshold Voltage (V_GS(th), typ) — 4.5 V
封裝 — PG-VSON-4-1 (Surface Mount)
MSL 等級 — [DATA_NEEDED: MSL Level]
RoHS 狀態 — Compliant

資料表與資源

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