IPD60R210PFD7SAUMA1 vs IPN60R2K0PFD7SATMA1 Perbandingan

Perbandingan bersamaan detil IPD60R210PFD7SAUMA1 dari Infineon dan IPN60R2K0PFD7SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD60R210PFD7SAUMA1 IPN60R2K0PFD7SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS PFD7 —
Technology Superjunction (CoolMOS) N-Channel Power MOSFET CoolMOS superjunction
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc) 16 A —
On-Resistance (RDS(on), max) 210 mOhm —
Power Dissipation (Ptot, Tc=25C) 64 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Package Type TO-252 (DPAK) —
Manufacturer Package Designator PG-TO252-3-344 —
Tipe Mounting Surface Mount (SMT) Surface Mount
Pin Configuration 3-Pin (2+Tab) - Gate, Drain (tab), Source —
Rentang Suhu Kerja -55C to +150C (TJ) [DATA_NEEDED: operating temperature range]
Lead-Free / RoHS Yes (compliant) —
Application Segment Consumer-grade SMPS —
Product Series — CoolMOS PFD7
Channel Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 600 V
Continuous Drain Current (Tc) — 3 A
Power Dissipation (Tc) — 6 W
RDS(on) typical @ VGS=10V — 2.0 Ohm
RDS(on) max @ VGS=10V — 1.626 Ohm (per Infineon product page)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 3.8 nC @ 10 V (per UTMel listing)
Input Capacitance (Ciss) — 134 pF @ 400 V (per UTMel listing)
Paket — PG-SOT223-3-1 (SOT-223)
Level MSL — [DATA_NEEDED: MSL level]
Status RoHS — Compliant (per Newark listing)

Spek dan Sumber

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